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lifetime buy last order 31jul04 last ship 31jan05 1 mrf652260 motorola rf device data the rf mosfet line nchannel enhancementmode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies up to 1.0 ghz and specified for the gsm 925 960 mhz band. the high gain and broadband performance of these devices makes them ideal for largesignal, common source amplifier applications in 28 volt base station equipment. ? specified performance @ 960 mhz, 28 volts output power e 60 watts power gain e 12.5 db (min) efficiency e 53% (min) ? 100% tested for load mismatch stress at all phase angles with 5:1 vswr maximum ratings rating symbol value unit drainsource voltage v dss 60 vdc gatesource voltage v gs 20 vdc drain current e continuous i d 7 adc total device dissipation @ t c > = 25 c derate above 25 c p d 118 0.9 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 1.1 c/w note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf652260/d
semiconductor technical data 960 mhz, 60 w lateral nchannel broadband rf power mosfet case 360b04, style 1 ? motorola, inc. 2001 ' rev 2
lifetime buy last order 31jul04 last ship 31jan05 mrf652260 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0 vdc, i d = 1 m adc) v (br)dss 60 e e vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0) i dss e e 1 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0 ) i gss e e 1 m adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 m adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 400 madc) v gs(q) 3 4 5 vdc drainsource onvoltage (v gs = 10 vdc, i d = 3 adc) v ds(on) e 0.65 0.8 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs 2.2 2.6 e s dynamic characteristics input capacitance (includes internal input moscap) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c iss e 83 e pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c oss e 44 e pf reverse transfer capacitance (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss e 4.3 e pf functional tests (in motorola test fixture) commonsource amplifier power gain (v dd = 28 vdc, p out = 60 w, i dq = 400 ma, f = 960 mhz) g ps 12.5 e e db drain efficiency (v dd = 28 vdc, p out = 60 w, i dq = 400 ma, f = 960 mhz) h 53 e e % output mismatch stress (v dd = 28 vdc, p out = 60 w, i dq = 400 ma, f = 960 mhz, vswr = 5:1, all phase angles) y no degradation in output power before and after test
lifetime buy last order 31jul04 last ship 31jan05 3 mrf652260 motorola rf device data figure 1. mrf652260 test circuit schematic b1 short rf bead fair rite2743019447 c1 15 pf chip capacitor c2, c3, c6, c9 47 pf chip capacitor c4 100 pf chip capacitor c5, c12 10 m f, 50 vdc electrolytic capacitor c7, c10 1000 pf chip capacitor c8, c11 0.1 m f, 50 vdc chip capacitor c13 470 m f, 50 vdc electrolytic capacitor c14 0.2 pf, chip capacitor &
& &

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( ( ( & "$)( & #)($)( * * c15 1.2 pf, chip capacitor l1 5 turns, 20 awg, idia 0.126 r1 10 k w , 1/4 w resistor r2 13 k w , 1/4 w resistor r3 1.0 k w , 1/4 w chip resistor tl1tl4 microstrip line ckt board 1/32 glass teflon ? , e r = 2.55 arlongx03005522

lifetime buy last order 31jul04 last ship 31jan05 mrf652260 4 motorola rf device data typical characteristics $ #)($)($#+&+((' 6;: $ #)($)($#+&+((' 6;: $ 35 "$)( $#+& +((' 2 &%)", !=

* ')$$ , *# ( *# ('
$ 6;: #)($)( $#+& +((' figure 2. power gain versus output power figure 3. output power versus supply voltage

* ' &" *# ( *10 &")&&"(!$'

figure 4. output power versus frequency figure 5. output power versus input power figure 6. dc safe operating area * *10 2 != * *10 % 4 '" (#"

* *10 % 4 2 != (
( h $ 6;: 79 $#+&"1 % 4 4 4
4 $ #)($)($#+&+((' 6;: $ 35 + +
+ $ 35 +
+ +
h ",
* *10 % 4 2 != figure 7. drain current versus gate voltage &")&&"(4
* ' ( *# ( *# (' * ' *10 (,$ * '#+"

lifetime buy last order 31jul04 last ship 31jan05 5 mrf652260 motorola rf device data typical characteristics figure 8. capacitance versus voltage

* ' &"'#)& *# ( *# (' $("7 * ' *10 2
!=
399 699 899

lifetime buy last order 31jul04 last ship 31jan05 mrf652260 6 motorola rf device data broadband circuit application (as shown in application note an1670/d, a60 watts, gsm 900 mhz, ldmos twostage amplifiero) figure 9. gsm 900 amplifier schematic
44 44 44 44 # ' #& ! '&+' $
("'' 44 (#$ !( '# & '(" figure 10. pcb layout c1 5.6 pf (avx accup) c2, c3 15 pf (avx accup) c4, c5 10 pf (avx accup) c6 2.7 pf (avx accup) & "$)( & #)($)( * ' &

& * c7 2.2 pf (avx accup) c8, c9 470 pf (npo) r1 3.9 k w r2 1 k w
lifetime buy last order 31jul04 last ship 31jan05 7 mrf652260 motorola rf device data broadband circuit application (as shown in application note an1670/d, a60 watts, gsm 900 mhz, ldmos twostage amplifiero) figure 11. component parts layout 44
&
& ' ()"" !&
'! * 6;5< figure 12. performance in broadband circuit (at small signal) 2 &%)", !=

"$)(*'+&1 * * % 4 79 $#+&"1

lifetime buy last order 31jul04 last ship 31jan05 mrf652260 8 motorola rf device data f mhz s 11 s 22 900 920 940 0.66 + j4.71 0.61 + j4.89 0.64 + j4.79 2.41 + j2.91 2.32 + j2.94 2.26 + j3.02 960 980 0.59 + j5.03 0.58 + j4.97 2.23 + j3.05 2.22 + j3.27 z in ohms z out ohms 0.60 j0.93 0.57 j0.82 0.59 j0.88 1.48 j0.82 1.50 j0.77 1.62 j0.71 0.55 j0.66 0.56 j0.73 1.79 j0.60 1.82 j0.49 26 v, 70 watts != - 6
w - 35 - 6;: != 2 != != figure 13. input and output impedances !& !& z in = conjugate of source impedance. z out = conjugate of the load impedance at a given output power, voltage, frequency and efficiency. ' - # - '#)&
9 mrf652260 motorola rf device data notes
mrf652260 10 motorola rf device data notes
11 mrf652260 motorola rf device data package dimensions case 360b04 issue e g e c

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' ' ! ! /// ! ( d 2x k 2x b b (flange) h f ! ! 000 ! ( ! ! /// ! ( a m (insulator) a t n (lid) ! ! 000 ! ( r (lid) s (insulator) ! ! ... ! (
mrf652260 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including at ypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 japan : motorola japan ltd.; sps, technical information center, 3201, minamiaz abu. minatoku, tokyo 1068573 japan. 8 1334403569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong ko ng. 85226668334 technical information center: 18005216274 home page : http://www.motorola.com/semiconductors/ mrf652260/d

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